Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields
Identifieur interne : 010048 ( Main/Repository ); précédent : 010047; suivant : 010049Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields
Auteurs : RBID : Pascal:01-0249906Descripteurs français
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- 7855C, 7867D, 7866F, 8105E, 7321F, 8107S, 7847, 7135C, 7765L, 7820L, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Puits quantique semiconducteur, Photoluminescence, Spectre résolution temporelle, Exciton, Etat interface, Effet Faraday, Matériau semiconducteur piézoélectrique, Dynamique spin.
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Abstract
The exciton dynamics in InxGa1-xAs/GaAs quantum wells grown on (111)B and (100) GaAs substrates were studied by time-resolved photoluminescence (PL) under magnetic fields in a Faraday configuration. We have found that the piezoelectric fields in (111)B samples affect the transient behavior of the PL spectra. Compared with the reference (100) sample, we have found that the strong piezoelectric fields, as well as the magnetic fields, cause a slower spin-flip process in (111)B strained quantum wells. © 2001 American Institute of Physics.
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Tsai</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Chiao Tung University, Hsin Chu, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Chiao Tung University, Hsin Chu</wicri:regionArea><wicri:noRegion>Hsin Chu</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Condensed Matter Center, National Taiwan University, Taipei, Taiwan</s1></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Condensed Matter Center, National Taiwan University, Taipei</wicri:regionArea><wicri:noRegion>Taipei</wicri:noRegion></affiliation></author><author><name sortKey="Lee, C P" uniqKey="Lee C">C. P. Lee</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Chiao Tung University, Hsin Chu, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Chiao Tung University, Hsin Chu</wicri:regionArea><wicri:noRegion>Hsin Chu</wicri:noRegion></affiliation></author><author><name sortKey="Voskoboynikov, O" uniqKey="Voskoboynikov O">O. Voskoboynikov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Chiao Tung University, Hsin Chu, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Chiao Tung University, Hsin Chu</wicri:regionArea><wicri:noRegion>Hsin Chu</wicri:noRegion></affiliation></author><author><name sortKey="Cheng, H H" uniqKey="Cheng H">H. H. Cheng</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electronic Engineering, National Chiao Tung University, Hsin Chu, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">République de Chine (Taïwan)</country><wicri:regionArea>Department of Electronic Engineering, National Chiao Tung University, Hsin Chu</wicri:regionArea><wicri:noRegion>Hsin Chu</wicri:noRegion></affiliation></author><author><name sortKey="Shen, Jinxi" uniqKey="Shen J">Jinxi Shen</name></author><author><name sortKey="Oka, Yasuo" uniqKey="Oka Y">Yasuo Oka</name></author></titleStmt><publicationStmt><idno type="inist">01-0249906</idno><date when="2001-06-15">2001-06-15</date><idno type="stanalyst">PASCAL 01-0249906 AIP</idno><idno type="RBID">Pascal:01-0249906</idno><idno type="wicri:Area/Main/Corpus">011129</idno><idno type="wicri:Area/Main/Repository">010048</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Excitons</term><term>Experimental study</term><term>Faraday effect</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface states</term><term>Photoluminescence</term><term>Piezoelectric semiconductors</term><term>Semiconductor quantum wells</term><term>Spin dynamics</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7855C</term><term>7867D</term><term>7866F</term><term>8105E</term><term>7321F</term><term>8107S</term><term>7847</term><term>7135C</term><term>7765L</term><term>7820L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Exciton</term><term>Etat interface</term><term>Effet Faraday</term><term>Matériau semiconducteur piézoélectrique</term><term>Dynamique spin</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The exciton dynamics in In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs quantum wells grown on (111)B and (100) GaAs substrates were studied by time-resolved photoluminescence (PL) under magnetic fields in a Faraday configuration. We have found that the piezoelectric fields in (111)B samples affect the transient behavior of the PL spectra. Compared with the reference (100) sample, we have found that the strong piezoelectric fields, as well as the magnetic fields, cause a slower spin-flip process in (111)B strained quantum wells. © 2001 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>89</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Time-resolved photoluminescence study of InGaAs/GaAs quantum wells on (111)B GaAs substrates under magnetic fields</s1></fA08><fA11 i1="01" i2="1"><s1>TSAI (F. Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>LEE (C. P.)</s1></fA11><fA11 i1="03" i2="1"><s1>VOSKOBOYNIKOV (O.)</s1></fA11><fA11 i1="04" i2="1"><s1>CHENG (H. H.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHEN (Jinxi)</s1></fA11><fA11 i1="06" i2="1"><s1>OKA (Yasuo)</s1></fA11><fA14 i1="01"><s1>Department of Electronic Engineering, National Chiao Tung University, Hsin Chu, Taiwan</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="02"><s1>Condensed Matter Center, National Taiwan University, Taipei, Taiwan</s1></fA14><fA14 i1="03"><s1>Research Institute for Scientific Measurements, Tohoku University, Katahira, Sendai, Japan</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>7875-7878</s1></fA20><fA21><s1>2001-06-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. 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